Abstract
We report on the noise characterization of photoconductors based on PbS colloidal quantum dots. The devices operate in the near infrared region with peak responsivity exceeding 70 A/W at 1.3 μm at low optical intensity and low voltage bias. The large responsivity, combined with the low dark current of high resistance devices, provides a specific detectivity D* as large as 1011 cm Hz1/2 W−1. The noise characteristics are investigated using noise current spectra measured at different biases both in dark and under optical excitation. The analysis revealed that the noise is clearly dominated by the flicker component up to 100 kHz. The noise performance is investigated at different optical intensities and for different device dimensions and voltage biases.
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