Abstract
Dark current noise measurements were carried out between 10 and 10/sup 4/ Hz at T=80 K on two InGaAs-InP quantum-well infrared photodetectors (QWIPs) designed for 8-/spl mu/m infrared (IR) detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependant gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (/spl sim/7/spl times/10/sup 22/ cm/sup -3//spl middot/s/sup -1/) is similar to AlGaAs-GaAs QWIPs with similar peak wavelengths, but the gain is 50/spl times/ larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
