Abstract
We have developed an ultra-low noise 94 GHz MMIC amplifier using InGaAs/InAlAs/InP transistor technology. The MMIC designs incorporate a single transistor stage with input and output matching networks as well as gate and drain bias networks. Two MMICs have been incorporated into a single housing providing 10 dB of gain. At room temperature, the integrated amplifier has a measured noise of 365 K at 94 GHz. Cryogenic measurements have been performed using a direct detection total power radiometer with all amplification provided by MMIC amplifiers. The noise figure for the entire radiometer has been measured to be 78 K. The noise figure for the cryogenic InP MMIC 2-stage amplifier unit has been measured to be 51 K with a low power consumption of 0.84 mW per stage. The stability of the radiometer with a 4 GHz bandwidth, is characterized by a power spectrum with a '1/f knee' frequency of 45 Hz.
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