Abstract

A procedure for optimizing the noise performance of CMOS wideband amplifiers with capacitive sources is described. The procedure takes both the thermal and 1/f noise into consideration and makes it possible to determine the optimal input MOSFET dimensions and DC biasing conditions for optimal amplifier noise performance. The theoretical lower limit for the noise level that can be achieved by a CMOS technology is derived. It is shown that, for an AM wideband amplifier, a much better noise performance can be obtained by using CMOS technology than by using a bipolar one. >

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