Abstract
A comprehensive noise model of a junction gate field-effect transistor (JFET) charge amplifier is presented for applications with piezoelectric sensors. Based on this previously reported amplifier structure, a noise equivalent circuit is derived and discussed. Universal noise gain expressions for each of the twelve considered noise sources are given. By means of an analytical description of the charge amplifier’s noise behavior, the design and optimization of such preamplifiers for various capacitive microelectromechanical sensor systems will be distinctly simplified. Calculations of the noise floor are compared with measurements with a cantilever-type magnetoelectric sensor and with the performance of a so far commonly utilized basic charge amplifier. With the JFET charge amplifier a noise reduction of approximately 22 dB is achieved in the vicinity of the utilized sensor’s resonance frequency of 7.45 kHz. The reported amplifier is the first which has no negative influence on the total noise level of a resonant magnetoelectric sensor system.
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