Abstract
AbstractThe advantages of heterojunction bipolar transistors (HBTs) make them very promising for modern RF communication systems and therefore their noise performance becomes an important issue as well. A procedure for HBT noise modeling based on the neural network approach is presented in this paper. The proposed models are characterized by high accuracy and efficiency commonly requested for today's CAD techniques. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 852–854, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI.10.1002/mop.22275
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