Abstract
Aggressive technology scaling has resulted in stability reduction for classic SRAM designs. This is especially problematic for large integrated circuits. The stability of SRAM cells can be affected by noise during a read operation and by radiation during the standby mode. In this paper, we present an approach to address the gradual stability reduction in SRAM designs. We present an SRAM design tradeoffs approach to improve the characteristics of SRAM by modulating the transistor sizing ratio, β. We test our approach on various SRAM designs in 32nm technology. We optimize the SRAM designs with β for various constraints in power consumption, performance, radiation tolerance and data stability. We discuss different design trends produced by the extensive approach analysis.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
