Abstract
A critical discussion is given of existing methods for the computation of noise in single injection space−charge−limited (SCL) devices: the salami method, the Langevin method, and the impedance field method. In addition, a new method is set forth, which in one form (finite volume divisions Δ3r) presents a lumped network description of noise and electrical parameters, whereas in another form (Δ3r→0) it presents a continuous media transport picture which is characterized by a transfer impedance tensor. The first form ties in with a modified salami method, whereas the second form is the substratum from which the more global impedance field formulas can be derived. A necessary and sufficient condition under which the noise is expressible as generalized Nyquist noise is obtained. For the simplest device, the thermal electron trap−free insulator, this is applied to one−dimensional as well as some three−dimensional geometries.
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