Abstract
Noise from a-Si:H p-i-n diodes (5 approximately 50- mu m thick) under reverse bias was investigated. The current-dependent 1/f-type noise was found to be the main noise composition at high bias. At low bias, the thermal noise from a series resistance of the p-layer and from metallic contacts is the dominant noise source, which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by approximately a factor of 2. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component for zero-biased diodes. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
