Abstract
The principal noise sources of GaAs MESFETs are taken into account in order to completely characterize the equivalent circuit model that has been utilized in the design of a low-noise small-signal amplifier for optical receivers. The total input noise current of the amplifier, due to correlated gate and drain MESFET noise, has been estimated for evaluating the excess channel noise factor F for different values of the photodiode capacitance. A method is demonstrated for easy identification of the matching network parameters and photodiode capacitance that mmimize the noise. Finally, the minimum noise gain, gain-frequency dependence, input and output voltage standing wave ratios, noise figure, and bandwidth of the amplifier are evaluated in the 8 to 12 GHz frequency range. A gain of 22.1 1 dB and a noise figure less than 3 dB in a bandwidth larger than 4 GHz are obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
