Abstract
We report on extensive noise measurements performed on double-sided, AC-coupled, punch-through biased silicon strip detectors. We used a single-channel acquisition chain, reading one strip per side, all other strips being kept grounded. The noise has been measured over a wide range of peaking times and leakage currents, allowing a careful determination of the various noise contributions. We determined the noise contribution of the punch-through mechanism and we observed, on different sensors, two unexpected noise terms, one related to the punch-through current and the other to the presence of resistive layers at the Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface.
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