Abstract
Dark current noise power spectral density of a series of a-Si:H pin diodes with different i layer thicknesses (400 and 130nm) and front contact material (SnO2 and Cr) was measured at different forward and reverse bias. Considering static and dynamic properties of the measurement system and diodes themselves, parameters of thermal, shot and 1/f noise of diodes were determined and mutually compared. The main noise sources are shot and 1/f noise. The 1/f noise at forward bias shows no significant deviations among different diodes, while at reverse bias, diodes deposited on SnO2 exhibit high 1/f noise with respect to those on Cr, where it remains below detection limit.
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