Abstract
Direct comparison of noise behaviors between GaAs Schottky-barrier junction and Si diffused p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n junction diodes operating in the 50-GHz range is reported by using the same circuitry. In the oscillator operation, the GaAs diode exhibits excess "1/f <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sup> " noise near carrier, whereas the Si diode shows flat spectrum. Far from the carrier, and AM-DSB-NSR of -133 dB in a 100-Hz bandwidth and an FM noise measure of 27.1 dB are observed for GaAs diodes. Corresponding values obtained for Si diodes are -125 and 36.2 dB, respectively. As a reflection amplifier, minimum noise figures of 27.5 and 38 dB are achieved for the GaAs and Si devices, respectively. These results indicate that the GaAs IMPATT is superior in noise behavior to the Si diode also in the 50-GHz frequency range by about 10 dB. It is emphasized that the noise induced in the bias circuit of the IMPATT oscillator is a replica of the sideband noise of the output power and can be used as an indicator to obtain a low-noise tuning condition of the oscillator.
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