Abstract
This article describes the noise characteristics of various silicon-on-insulator insulated-gate pn-junction devices with anode-offset regions. The static characteristics of these devices are modeled for the noise analysis; the model is composed of a series of a metal-oxide-semiconductor field-effect transistors and the pn junction. It is shown experimentally that the noise power of the devices is proportional to In (n>0), where I is the anode current. Since the noise characteristics are not explained by the conventional theory, a phenomenological model is proposed. It is shown that the proposed basic model, which is compatible with the conventional Hooge model, can explain the experimental results. The influence of anode-offset length is also discussed and modeled.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
