Abstract
Measurement results and analysis of noise in MOSFETs manufactured in a 0.35 μm CMOS process are presented in the paper. Noise sources and noise models in submicron MOSFETs are reviewed briefly. The test transistors are designed keeping in mind applications in low noise front-end circuit for neutron detectors based on silicon microstrip detectors and microstrip gas chambers. The measurement method and measurement set-up are described. The measured noise spectra for a family of P-channel and N-channel transistors with different gate lengths and for different bias currents are presented and discussed with respect to short channel effects.
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