Abstract
Noise properties of a-VWOx thin films deposited by reactive DC sputtering technique for microbolometer applications have been investigated. It was found from measurements that there is no random telegraph switching (RTS) noise of deposited films. Electrode material effects on the contact resistance were measured thereby using electrode structure consisted of two different metals. Various currents and electrode structures effects on 1/f noise measurements were studied. As a result of calculations, 1/f noise parameter was found as 3.2 × 10−13. This situation shows that developed a-VWOx is notably a suitable material for microbolometer applications.
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