Abstract
Microwave and low frequency noise performance of buried channel SiGe HFETs fabricated on several strain relieved buffer (SRB) are presented. The impact of such SRB on microwave device noise performance is estimated by a proper noise de-embedding technique. The influence of device gate length on high microwave noise parameters is also discussed. High frequency noise properties measured in the 2.5-18 GHz frequency range are simulated means of the small signal equivalent circuit. Good agreement between measurement and modeling is obtained Furthermore, the low frequency noise properties for devices with different gate dimensions are discussed in order to predict further improvements on noise performance when shrinking the gate length below 100 nm.
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