Abstract
Three circuit concepts (high impedance, common gate, and transimpedance) for a 10 Gbit/s monolithic receiver OEIC consisting of an InGaAs/InP pin photodiode and InAlAs/InGaAs/InP HEMTs are compared in terms of noise and small-signal performance using on-wafer measurements. A total equivalent input noise current of 13.5 pA/√Hz within the bandwidth of the transimpedance circuit is the lowest value ever reported for a monolithic InP-based 10 Gbit/s receiver OEIC.
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