Abstract
In order to obtain narrow linewidth semiconductor laser around 1564 nm, we design a distributed Bragg reflector (DBR) laser based on surface etched high-order Bragg gratings (SE-HOBGs). To achieve C-band Bragg resonance wavelength selection, the laser is designed as a grating period of 4.84 μm, an etched groove depth of 1.2 μm, a grating duty cycle of 69%, a total grating length of 72 μm, and a ridge waveguide width of 4.0 μm. For the DBR laser with cavity length of 1 mm, the output power reaches to 9.9 mW/facet and a 1564 nm laser output with a side mode suppression ratio (SMSR) more than 30 dB at an injection current of 80 mA. We measured and analyzed the phase/frequency noise, linewidth characteristics and the relative intensity noise (RIN) characteristics of the laser in detail. The lasers showed narrow Lorentz linewidth of 70 kHz. This paper provides a simple method for large-scale production of narrow linewidth semiconductor lasers.
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