Abstract
This paper deals with a general problem concerning semiconductor-laser amplifiers used for frequency conversion. The amplified spontaneous emission (ASE) of a saturated amplifier is investigated experimentally and theoretically. An analytical solution accounting for the spatial dependence of the inversion parameter as well as the spectral dependence of the ASE is derived. Hence, the results can be applied to arbitrary saturation conditions and frequency shifts. Our theory is applied to frequency converters based on four-wave mixing and is found to be in good agreement with both the numerical results and the experimental data. In order to quantify the performance of a frequency converter, a noise figure is defined and shown to be strongly dependent on the frequency detuning and the power of the input waves.
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