Noble gas ion beam bombardment effects on H-, graphite -, Na-, Fe- and Zn-doped MgO thin films in plasma-related discharge devices

Abstract

Doping with various elements to the MgO film is better suited for increasing secondary electron emission coefficient This allows the evolution of the luminous efficacy and the lifespan of the plasma-related devices. The resistance against ion sputtering is another critical issue for the prolongation of the lifespan. This research focuses on the effect of H-, Graphite -, Na-, Fe-and Zn -ion-doping on sputtering yields and numbers of vacancies created in MgO as a function of ion energy and incident angle. Our simulation have shown that the MgO doped exhibit better sputtering resistance and lower numbers of vacancies.