NO 2 sensitivity of WO 3 thin film obtained by high vacuum thermal evaporation

Abstract

The gas sensitivity, selectivity and stability properties of WO 3 thin films for the detection of NO 2 gas in the concentration range 0.2–5 ppm, have been evaluated and discussed in the light of the preparation conditions and working temperature. Thin films were obtained by evaporating high purity WO 3 powder by an electrically heated crucible at about 5 × 10 −4 Pa on sapphire substrates provided with Pt interdigital type sputtered electrodes and annealed for 1 h at 400, 500 and 600°C. The film morphology, crystalline phase and chemical composition were characterised through AFM, low angle XRD and XPS. The electrical response was measured by means of DC current mode. The annealed films showed crystallographic orientation belonging to the triclinic structure of WO 3, while the as-deposited films were found to be amorphous. The binding energies of O 1s and W 4f confirmed the existence of the WO 3 phase, with a stoichiometric ratio close to the theoretical one. All the films showed the highest sensitivity to NO 2 at a working temperature of 200°C. The 500°C annealed film was found to be the most sensitive to NO 2 gas, compared to those annealed at 400 and 600°C. No cross sensitivity effects were found by exposing the sensors to CO, CH 4. WO 3 films showed strong sensitivity to C 2H 5OH and H 2O. Long term stability test at a working temperature of 350°C, performed by cycling the films in dry air and 5 ppm NO 2 revealed no substantial change in the electrical properties in terms of drift and sensitivity.