Abstract
In this work, we report the effect of post-deposition film treatment on the NO 2 sensing properties of CuPc thin films for room temperature operation. The gas-sensitive response of the electrical conductivity to doping with NO 2, doping with oxygen (in air) and cooling to 77 K in liquid nitrogen are reported. The pretreatment with NO 2 is shown to improve the gas sensing properties by providing both an increase in the magnitude of the conductivity change for a given NO 2 concentration and a significant improvement in the recovery time. Data is analysed using an Elovich model, which suggests that the cooled devices have the best fit to this model; the data for the NO 2 doped devices suggest a Langmuir behaviour. For all devices, a simple time derivative of the change in current provides a measure of concentration for real time gas sensing applications.
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