NMR study of magnetic doped semiconducting (SnTe)100−x (MnTe)x compounds

Abstract

NMR shift and line width between T = 4.2 and 300 K at the Sn and Te sites have been measured in a series of Mn doped p-type semiconductors (SnTe)100−x (MnTe)x, with x = 0, 0.2, 0.5, 1, 2, and 5. An analysis of Sn Knight shift based on a molecular field model yields a value for the s–d exchange between Mn localized moments and conduction holes of Jsd = −0.07 ± 0.02 eV. The same model applied to the Sn and Te line widths yields fair agreement with the measurements. The Te Knight shift is much less sensitive to the Mn magnetization than Pb.