Abstract
NMR shift at the Pb and Te sites and the linewidth of the Te resonance have been measured between T=300K and T=4.2K in a series of Mn-doped p-type semiconductors (PbTe)100-x(MnTe)x, with x=0, 0.2, 0.5, 1 and 2. An analysis of Pb Knight shift based on a molecular field model yields a value of Jsd=0.010+or-0.005 eV for the s-d exchange between Mn localised moments and conduction holes. The same model applied to the Te linewidth partially explains the measurements. The Te Knight shift is quite insensitive to the introduction of Mn impurities, even at highest concentration and lowest temperature. Hall effect measurements made on the samples at T=77K and t=300K prove that the presence of Mn up to 2 at.% does not alter the charge carrier density of the host PbTe.
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