Abstract
Nuclear Magnetic Resonance has recently been used to establish the existence of two separate hydrogen environments in glow discharge deposited a‐Si:H. Here we compare our results for sputtered films with those obtained for glow discharge samples. The sputtered films have more hydrogen in the highly clustered environments than do the glow discharge films. In addition, flims prepared with a low partial pressure of hydrogen in the sputtering gas show no minimum in the spin lattice relaxation time T1 as a function to temperature, unlike the glow discharge films where a minimum in T1 is observed. This minimum, which is attributed to relaxation via disorder modes, is also seen in a sputtered film prepared under a high partial pressure of hydrogen.
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