Abstract

NMR, IR and ESR measurements have been performed for hydrogenated amorphous Si-Ge alloy films prepared by magnetron sputtering. NMR signals similar to those for a-Si:H are observed with no motional narrowing effect. The content of dispersed hydrogen atoms estimated from the narrow component of the NMR signal is independent of the Ge content, although the total hydrogen content decreases with increasing the Ge content. Such NMR results are discussed in conjunction with the results of ESR.

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