Abstract
A novel N-type MOS (NMOS) only Schmitt trigger with voltage booster (NST-VB) circuit is presented. The proposed NST-VB circuit uses NMOS transistors in both pull-up and pull-down networks to reduce the effect of negative bias temperature instability (NBTI) on the circuit. The proposed circuit is less affected by both inter-die and intra-die process variations in consequence of NMOS only structure. Owing to NBTI, the increase in delay for the proposed NST-VB circuit is only 0.47% as compared with 7.2% for conventional Schmitt trigger after the stress time of three years. For the viability of the proposed circuit figure of merit (FOM) is used as a performance metric and it is found that the proposed circuit has 15.35 × and 3.53 × improved FOM as compared with the conventional Schmitt trigger and NMOS inverter, respectively.
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