Nitrogen-Doped Single-Walled Carbon Nanotubes by Floating-Catalyst CVD Process

Abstract

Due to the properties of single-walled carbon nanotube (SWCNT), thin film SWCNTs have been used for many versatile applications. Direct synthesis of the nanotube films with desired electronic structures without prerequisite of post treatment process then becomes one important step. Here, we present the synthesis of nitrogen-doped SWCNTs by floating-catalyst chemical vapor deposition process. With low nitrogen level incorporated into the sp2 carbon network, substitutional and pyridinic nitrogens become predominance. The electronic structure of N-doped SWCNT film could be changed into n-type doping. The localized structures of carbon and nitrogen bonding environments were also revealed by x-ray absorption spectroscopy. The formation of p-n junction was also obtained from the I-V characteristic of N-doped SWCNT heterojunction diode revealing n-type behavior of the sample.