Abstract
Single crystal CVD diamond has been grown on (100)-oriented CVD diamond seed in six layers to a total thickness of 4.3 mm, each layer being grown in gas with increasing concentration of nitrogen. The nitrogen doping efficiency, distribution of color and internal stress have been studied by SIMS, optical absorption, Raman spectroscopy and birefringence imaging. It is shown that nitrogen doping is very non-uniform. This non-uniformity is explained by the terraced growth of CVD diamond. The color of the nitrogen-doped diamond is grayish-brown with color intensity gradually increasing with nitrogen concentration. The absorption spectra are analyzed in terms of two continua representing brown and gray color components. The brown absorption continuum exponentially rises towards short wavelength. Its intensity correlates with the concentration of nitrogen C-defects. Small vacancy clusters are discussed as the defects responsible for the brown absorption continuum. The gray absorption continuum has weak and almost linear spectral dependence through the near infrared and visible spectral range. It is ascribed to carbon nanoclusters which may form in plasma and get trapped into growing diamond. It is suggested that Mie light scattering on the carbon nanoclusters substantially contributes to the gray absorption continuum and determines its weak spectral dependence. A Raman line at a wavenumber of 1550 cm−1 is described as a characteristic feature of the carbon nanoclusters. The striation pattern of brown/gray color follows the pattern of anomalous birefringence suggesting that the vacancy clusters and carbon inclusions are the main cause of internal stress in CVD diamond. A conclusion is made that high perfection of seed surface at microscale is not a required condition for growth of low-stress, low-inclusion single crystal CVD diamond. Crystallographic order at macroscale is more important requirement for the seed surface.
Highlights
Nitrogen is the major impurity in diamond
In order to get a better insight in the behavior of nitrogen in chemical vapor deposition (CVD) diamond we studied nitrogen-doped CVD diamond and, in this communication, we present the results on the efficiency of doping, internal stress and formation of major defects determining color of CVD diamond grown in the presence of nitrogen
We propose an explanation for the above experimental observations assuming two major mechanisms of nitrogen doping for CVD diamond
Summary
Nitrogen is the major impurity in diamond. Nitrogen influences all physical properties of diamond and especially its optical, electronic, thermal and gemological properties. Since the stability of nitrogen-containing defects and the kinetics of their formation strongly depend on pressure, chemical environment, and time at temperatures relevant to bulk atomic diffusion, the behavior of nitrogen in CVD diamond is expected to differ from that observed in natural and HPHT-grown synthetic. In CVD-grown diamond, nitrogen is generally detected as C-defects, NVdefects and NVH-defects (a hydrogen atom attached to NV-defect) Some of these defects are known to exist in several charge states Some peculiarities of behavior of nitrogen in CVD diamond are the low doping efficiency during growth [6,7,8], the low aggregation rate at high temperature (negligible formation of A- and B-defects), and the formation of many specific defects never observed in HPHT-grown synthetic and natural diamonds In order to get a better insight in the behavior of nitrogen in CVD diamond we studied nitrogen-doped CVD diamond and, in this communication, we present the results on the efficiency of doping, internal stress and formation of major defects determining color of CVD diamond grown in the presence of nitrogen
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