Abstract
The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline N x ( GeTe ) 1 - x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.
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