Abstract
A nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination center. The level is found to be responsible for the reverse bias current in the depletion region of n-type GaAsN schottky junction and N+-GaAs/p-GaAsN heterojunction, where the current is due mainly to electrons. This result is obtained by correlating the thermal activation energy of the reverse bias current and the activation energy of electron traps, investigated in the two structures by deep level transient spectroscopy.
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