Abstract
Defects and impurities play a fundamental role in semiconductors affecting their mechanical, optical, and electronic properties. Nitrogen (N) impurities are almost always present in a silicon (Si) lattice, either unintentionally, due to the growth and processing procedures, or intentionally, as a result of implantation. Nitrogen forms complexes with intrinsic defects (i.e., vacancies and self-interstitials) as well as with other impurities present in the Si lattice such as oxygen and carbon. It is, therefore, necessary to investigate and understand nitrogen-related defects, especially their structures, their energies, and their interaction with intrinsic point defects and impurities. The present review is focused on nitrogen-related defects (for example Ni, Ns, NiNi, NiNs, NsNs); nitrogen–self-interstitial and nitrogen-vacancy-related complexes (for example NsV, (NiNi)Sii, (NsNs)V); nitrogen–oxygen defects (for example NO, NO2, N2O, N2O2); more extended clusters such as VmN2On (m, n = 1, 2); and nitrogen–carbon defects (for example CiN and CiNO). Both experimental and theoretical investigations are considered as they provide complementary information.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
