Abstract
The effects of H irradiation on the optical properties of GaAs 1-y N y epilayers in the dilute N limit have been studied. H irradiation leads to a progressive and finally complete passivation of bound exciton levels related to N complexes. A further thermal annealing restores the optical properties that the samples had before hydrogenation. These results are accounted for by the formation of N-H complexes with different bond strengths and dissociation energies.
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