Abstract
Nitrogen plasma treatment was performed on fluorine-doped tin oxide (SnO2:F) front electrodes, and its impact on the performance of pin type amorphous Si (a-Si) solar cells was investigated. Nitrogen plasma treatment reverses the surface band bending of SnO2:F from accumulation to depletion, thus in turn reversing the band bending of the p type amorphous silicon carbide (p-a-SiC) window layer. The reversal of band bending leads to the collection of carriers generated in p-a-SiC, and quantum efficiency in the short wavelength regime is thereby enhanced. On the other hand, surface depletion of SnO2:F causes a reduction of the diode built-in voltage and increased series resistance, which could degrade the open circuit voltage (Voc) and fill factor (FF), the degradation of which is strongly affected by the deposition time of p-a-SiC.
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