Nitrogen ion energy dependencies of dielectric constants and compositions of barium carbide–barium nitrate mixed films deposited on silicon wafers by an ion beam assisted deposition technique

Abstract

Thin BaC6–BaN2O4 mixed films with a thickness of 25–60nm were deposited on Si wafers by evaporating BaCO3 with electron beams and simultaneously applying a mixed beam of N2 molecules and nitrogen ions (an ion beam assisted deposition technique). BaC6 films deposited on Si wafers by evaporating only BaCO3 had low-k values, such as 1.3. In contrast, mixed films containing a small amount of BaC6 and a large amount of BaN2O4 had mild k values, such as 5.6.