Abstract
In this letter, we present x-ray diffraction (XRD) measurements on as-grown and annealed (In,Ga)As∕GaAs and (In,Ga)(As,N)∕GaAs multiple-quantum wells grown on GaAs (001) substrates. Concerning the (In,Ga)As material system, we observe a shift of the envelope in the XRD curves of the annealed samples. This shift can be explained by an indium–gallium interdiffusion across the (In,Ga)As∕GaAs interfaces. A diffusion model is employed to simulate the envelope shift which yields an activation energy of 0.8 eV. Regarding the XRD curves of the (In,Ga)(As,N) samples, no annealing-induced shift of the envelope is observed. Hence, we conclude that the incorporation of nitrogen suppresses the indium–gallium interdiffusion. Several models are discussed to explain this observation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
