Abstract
In this paper, temperature dependence photoluminescence has been taken on two multi-quantum well GaInNAs, with low indium composition and the impact of percentage nitrogen incorporation ⩽1%. The variation of peak energy position, linewidth, and integrated intensity emission have been investigated by adopting a localised state ensemble model to anticipate the dissimilar spontaneous emission mechanisms of the two samples. A good agreement has been observed between theoretical analysis and experimental data and enriches the understanding of the design and provides improvement opportunities for future GaInNAs based optoelectronic devices for biomedical applications.
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