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Abstract
We investigated the influence of nitrogen incorporation on the growth of InAsN∕GaAs quantum dots (QDs) using cross-sectional scanning tunneling microscopy. Nitrogen exposure during InAs growth leads to a rather strong dissolution and the formation of extended almost spherical InGaAs QDs with a very low nitrogen content. Nitrogen atoms are instead observed in the surrounding GaAs matrix, and indium atoms are even found underneath the nominal base plane of the QDs. These effects are related to a rather low solubility of nitrogen within InAs, leading to high strain between indium-rich QDs and the surrounding nitrogen-rich matrix.
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