Abstract
The network of hydrogenated amorphous germanium (a-Ge:H) has been modified with nitrogen by employing the rf glow discharge decomposition of a hydrogen-diluted gas mixture of NH3 and GeH4. It is found that the hydrogen dilution of the material gas hinders the incorporation of three-fold coordinated nitrogen atoms in the network and causes optical bandgap shrinkage. Dramatic enhancement of the conductivity and decrease of the activation energy are observed in the high-hydrogen-dilution regime, and are explained by the incorporation of four-fold coordinated nitrogen in the relaxed network.
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