Abstract
A vacuum field emission (VFE) transistor in vertical configuration with nitrogen-incorporated nanocrystalline-diamond emitters is presented. A novel self-aligned gate partition technique was utilized to construct the VFE device. The gate-controlled modulation of the emission current was demonstrated. A high emission current of 160μA and a low gate turn-on voltage of 25V were achieved. The device displayed high DC voltage gain of 1000 and negligible gate intercepted current, which are crucial features for microelectronic applications. Basic transistor characteristics with distinct cutoff, linear, and saturation regions were observed, revealing the practical application of the device for vacuum microelectronics and integrated circuits.
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