Abstract
Nitride phosphor SrAlSi4N7:Eu2+ was synthesized by gas pressure sintering of powder mixtures of Sr3N2, AlN, α‐Si3N4, and EuN at 1750°C under 0.48 MPa N2. The photoluminescent properties of SrAlSi4N7:Eu2+ were measured and analyzed. Two‐peak emission from Eu2+ located at two different Sr sites in the SrAlSi4N7 host structure was observed. When the phorphors were excited at 410 nm, the highest emission intensity was found to be ∼126% of that in YAG:Ce3+ excited at 460 nm. The highest relative emission intensity at 150°C was ∼84.6% of that at 30°C. The highest external quantum efficiency acheived was 58.5%. SrAlSi4N7:Eu2+‐based phosphors are potential for white light‐emitting diodes.
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