Abstract
We study nitrogen (N) doping in cuprous oxide (Cu2O) films by radical oxidation of Cu films at low temperature (500°C). The morphological, crystal, and optoelectronic properties of the Cu2O have been investigated by different N2 plasma treatment times. X-ray diffraction measurements show that Cu2O thin films grow on c-sapphire substrate with preferred (111) orientation. With increasing N2 plasma treatment time from 0 to 40min, the optical bandgap energy is increased from 1.69 to 2.42eV with p-type conductivity. From the Hall measurements, it is found that the hole density is increased from 1014 to 1015cm−3 and the resistivity is decreased from 1879 to 780Ωcm after N2 plasma treatment.
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