Abstract
Doping characteristics of nitrogen in AlGaP grown by organometallic vapor phase epitaxy (OMVPE) are investigated by using tertiarybutylamine (TBNH 2) as the nitrogen source. The nitrogen concentration increases with increasing TBNH 2 vapor phase composition. The nitrogen incorporation efficiency is raised with the introduction of aluminum, which may be due to the strong Al-N bond energy. A high crystalline quality of N-doped AlGaP layer for greenish color emission with nitrogen concentration as high as 10 20 cm -3 can be obtained by using TBNH 2 as the nitrogen source.
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