Nitrogen-doping effect on single-crystal diamond synthesis by HFCVD

Abstract

Nitrogen-doped homoepitaxial single-crystal diamond (SCD) films were grown on an SCD substrate by hot filament chemical vapor deposition (HFCVD) to confirm the potential that can yield high-quality single-crystal diamonds. The SCD films doped with 50 sccm nitrogen, grown by HFCVD, showed excellent surface properties based on optical microscopy, with a growth rate of 3.4 [Formula: see text]m/h, and a Raman peak around 1332 cm[Formula: see text] with a full width at maximum (FWHM) of 5.8 cm[Formula: see text], indicating high crystallinity. The FWHM of the (004) peak in the rocking curve was 392 arcsec for the nitrogen-doped SCD film, and that of the SCD substrate was 489 arcsec. Therefore, the crystalline properties and growth rates of the SCD films grown in the HFCVD system were improved, and the effect of nitrogen doping was verified.