Abstract
The microstructural and electrical-property changes of undoped and 5.4% nitrogen-doped Ge2Sb2Te5 were investigated. The transition temperature of sheet resistance increased owing to nitrogen doping, which corresponded well with the observed phase-change states. The lattice parameters of the undoped and nitrogen-doped Ge2Sb2Te5 exhibited the same tendency of decrease with increasing annealing temperature. Considering the increase in the Ge2Sb2Te5 energy state owing to the presence of interstitial nitrogen, the increase in the crystallization temperature is contrary to the thermodynamic viewpoint. Nitrogen atoms and N2 gas can be located at the interstitial site without distorting the crystal structure.
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