Abstract
Nitrogen doped p-type ZnSe layers grown on GaAs by molecular beam epitaxy (MBE) are studied with regard to their electrical transport and trap properties. Gold, aluminium and indium dots are used as metal electrodes for the formation of Schottky contacts in order to measure the IV, CV and DLTS characteristics. A strong hole trap generation is observed after a vacuum annealing as well as due to a constant current stress. The concentration of a dominant hole trap with an activation energy of about 0.65 eV is drastically increased especially after a thermal treatment at temperatures higher than 500 K. Furthermore, as a result of annealing experiments the electrode materials are found to influence the rate of trap generation. A diffusion induced defect generation mechanism seems to be responsible for the observed increase of trap concentration and the related decrease of effective acceptor doping concentration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
