Nitrogen-doped SiC/SiOx nanowire heterostructure synthesized by pyrolysis deposition of phthalocyanine derivative

Abstract

Nitrogen-doped SiC/SiOx nanowire heterostructure was synthesized successfully by chemical vapor deposition using phthalocyanine derivative as a precursor. Carbon and nitrogen atoms are provided simultaneously by the heterostructure, and nitrogen element was combined into the heterostructure effectively through pyrolysis of phthalocyanine derivative during the deposition. This special heterostructure exhibits a regular periodic cage-like SiOx bead decorated on SiC nanowires with diameter of 200 nm, whose formation mechanism could be primarily attributed to the combined effect from the vapor growth, Rayleigh instability and polar faces. The present method provides an alternative way for controllable fabrication of the nitrogen-doped SiC nanowire heterostructures for their tunable performances and nano-sized electronic devices application.