Nitrogen-doped, boron-doped and undoped multiwalled carbon nanotube/polymer composites in WORM memory devices

Abstract

We report the preparation of write-once-read-many times memory devices using composites of carbon nanotubes and poly(vinyl phenol) sandwiched between Al electrodes. Three types of nanotubes (undoped multiwalled carbon nanotubes, nitrogen-doped multiwalled carbon nanotubes and boron-doped multiwalled carbon nanotubes) are investigated for this application. The OFF to ON state switching threshold is only slightly dependent on nanotube type, but the ON/OFF current ratio depends on both nanotube type and concentration and varies up to 106, decreasing for nanotube concentrations larger than 0.50 wt% in the composite.