Abstract
Nitrogen-doped thermally expanded graphene oxide (NtGO) was prepared by a facile thermal expansion and hydrothermal doping process. The thermal expansion process plays a vital role in improving the electrochemical performance of N-doped graphene by preventing its aggregation and improving its conductivity. The specific capacitance of NtGO is 270 F g−1 at a discharge current density of 1 A g−1 and the capacitance retention is 97% after 2000 cycles at this density. The strategy developed here provides an efficient and facile way to prepare nitrogen-doped graphene.
Highlights
Nitrogen-doped thermally expanded graphene oxide (NtGO) was prepared by a facile thermal expansion and hydrothermal doping process
The thermal expansion process plays a vital role in improving the electrochemical performance of N-doped graphene by preventing its aggregation and improving its conductivity
We used a facile thermal expansion method to pre-treat graphene oxide followed by nitrogen doping into graphene oxide with a hydrothermal process with hexamethylenetetramine (HMT)
Summary
Nitrogen-doped thermally expanded graphene oxide (NtGO) was prepared by a facile thermal expansion and hydrothermal doping process. The thermal expansion process plays a vital role in improving the electrochemical performance of N-doped graphene by preventing its aggregation and improving its conductivity. We used a facile thermal expansion method to pre-treat graphene oxide followed by nitrogen doping into graphene oxide with a hydrothermal process with hexamethylenetetramine (HMT) (the product was denoted as NtGO). The capacitance of the resultant NtGO is 270 F gÀ1 at 1 A gÀ1, which is much higher than the conventional nitrogen doped graphene, attributed to the increased surface area by the thermal expansion and N doping. The preparation of NtGO involves the pretreatment with a thermal expansion process (the intermediate product here is denoted as tGO) and hydrothermal nitrogen doping, as illustrated in Scheme 1.
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